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PMDPB30XN

20 V, dual N-channel Trench MOSFET

6 July 2012 Product data sheet

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1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless

ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

•

Very fast switching

•

Trench MOSFET technology

•

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

•

Exposed drain pad for excellent thermal conduction

1.3 Applications

•

Charging switch for portable devices

•

DC-to-DC converters

•

Small brushless DC motor drive

•

Power management in battery-driven portables

•

Hard disc and computing power management

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

drain-source voltage - - 20 V

gate-source voltage

= 25 °C

-12 - 12 V

drain current V

= 4.5 V; T

amb

= 25 °C; t ≤ 5 s [1] - - 5.3 A

Static characteristics (per transistor)

DSon

drain-source on-state

resistance

= 4.5 V; I

= 3 A; T

= 25 °C - 32 40 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

Summary of content (13 pages)

PAGE 1
PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Very fast switching • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 8 D2 drain TR2 Simplified outline 6 5 7 1 Graphic symbol D1 4 D2 8 2 3 S2 G2 G1 S1 Transparent top view 017aaa254 DFN2020-6 (SOT1118) 3. Ordering information Table 3.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET Symbol Parameter Conditions Ptot total power dissipation Tamb = 25 °C Min Max Unit [2] - 490 mW [1] - 1170 mW - 8330 mW - 1.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa637 102 ID (A) Limit RDSon = VDS/ID 10 tp = 10 µs tp = 100 µs 1 DC; Tsp = 25 °C 10-1 tp = 10 ms tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa398 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.25 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa399 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 1 0.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 32 40 mΩ VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 55 69 mΩ VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C - 40 53 mΩ VGS = 1.8 V; ID = 1.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa640 120 1.8 V RDSon (mΩ) 017aaa641 120 2V RDSon (mΩ) 80 80 2.5 V 40 Tj = 150 °C 40 3V VGS = 4.5 V Tj = 25 °C 0 0 4 8 ID (A) 0 12 Tj = 25 °C Fig. 8. 0 4 8 VGS (V) 12 ID = 2 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9. 017aaa642 12 Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa643 1.8 ID (A) a 8 1.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa644 1.5 017aaa645 103 Ciss C (pF) VGS(th) (V) 1.0 102 max Coss Crss typ 0.5 10 min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa647 12 IS (A) 8 4 0 Tj = 150 °C 0 Tj = 25 °C 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.82 (2×) sot1118_fr Fig. 19. Reflow soldering footprint for SOT1118 (HUSON6) 11. Revision history Table 8. Revision history Document ID Release date Document status Change notice Supersedes PMDPB30XN v.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PMDPB30XN NXP Semiconductors 20 V, dual N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information .....................................