Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMDPB70XPE,115, MOSFET

1. Product profile

1.1 General description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Trench MOSFET technology

 2 kV ElectroStatic Discharge (ESD)

protection

1.3 Applications

 Relay driver

 High-speed line driver

 High-side load switch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm

PMDPB70XPE

20 V dual P-channel Trench MOSFET

Rev. 1 — 20 June 2012 Product data sheet

DFN2020-6

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

drain-source voltage T

=25°C ---20V

gate-source voltage -12 - 12 V

drain current V

=-4.5V; T

amb

=25°C; t ≤ 5 s

[1]

---4.2A

Static characteristics (per transistor)

DSon

drain-source on-state

resistance

=-4.5V; I

=-2A; T

= 25 °C - 66 79 mΩ

Summary of content (15 pages)

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020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 7 D1 drain TR1 Transparent top view 8 D2 drain TR2 DFN2020-6 (SOT1118) 6 5 7 1 Graphic symbol 8 2 D2 D1 4 G1 G2 3 S1 S2 017aaa260 3. Ordering information Table 3.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 2000 V ESD maximum rating electrostatic discharge voltage VESD [3] HBM; C = 100 pF; R = 1.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003871 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 100 μs tp = 1 ms -1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -102 -10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003792 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-003793 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.25 0.1 0.05 0 1 10-3 0.02 0.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003872 -12 -3.5 V -4.5 V -8.0 V ID (A) -3.0 V 017aaa129 −10−3 VGS = -2.8 V ID (A) -2.5 V −10−4 -8 (1) (3) (2) -2.2 V −10−5 -4 -1.8 V 0 0 -1 -2 -3 -4 −10−6 0.0 VDS (V) −0.5 −1.0 VGS (V) − 1.5 Tj = 25 °C; VDS = -3 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values aaa-003873 300 RDSon (mΩ) -1.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003875 -12 aaa-003876 1.5 ID (A) a -8 1.0 -4 0.5 Tj = 150 °C Tj = 25 °C 0 0 -1 -2 -3 0.0 -60 0 60 120 VGS (V) 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-003877 -1.5 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-003878 103 Ciss VGS(th) (V) max C (pF) -1.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET aaa-003879 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) ID = -2 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions aaa-003880 -5 IS (A) -4 -3 -2 -1 Tj = 150 °C Tj = 25 °C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VDS (V) VGS = 0 V Fig 16.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.1 1.9 0.65 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig 18. Package outline DFN2020-6 (SOT1118) PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) sot1118_fr Fig 19. Reflow soldering footprint for DFN2020-6 (SOT1118) PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDPB70XPE v.1 20120620 Product data sheet - - PMDPB70XPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 June 2012 © NXP B.V. 2012. All rights reserved.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PMDPB70XPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . .