SO T6 66 PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Trench MOSFET technology AEC-Q101 qualified 1.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 SOT666 S1 S2 017aaa262 3. Ordering information Table 3.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -20 V TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C - -550 mA VGS = -4.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa361 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10–1 (3) (4) (5) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 6. Thermal characteristics Table 6.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 8. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Table 7.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V VGS = 1.6 V 017aaa352 10–3 ID (A) 0.5 10–4 0.4 (1) (2) 0.50 0.75 (3) 1.4 V 0.3 10–5 0.2 1.2 V 0.1 1.0 V 0.0 0 1 2 3 VDS (V) 4 10–6 0.00 Tj = 25 °C 0.25 1.00 1.25 VGS (V) Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 9.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS (V) 0.50 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. TR1; Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa357 1.25 Fig 14.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa359 5 VDS VGS (V) 4 ID VGS(pl) 3 VGS(th) 2 VGS QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig 17. TR1; Gate-source voltage as a function of gate charge; typical values 017aaa360 0.7 IS (A) 0.6 Fig 18. Gate charge waveform definitions 017aaa363 -0.5 -4.5 V ID (A) -2.5 V -2.0 V -0.4 VGS = -1.8 V 0.5 -0.3 0.4 (1) (2) -1.6 V 0.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa364 -10-3 017aaa365 4 RDSon (Ω) ID (A) (2) (1) (3) 3 -10-4 (1) (3) (2) 2 (4) -10-5 1 -10-6 0.0 -0.5 -1.0 VGS (V) (5) 0 0.0 -1.5 -0.1 -0.2 Tj = 25 °C; VDS = -5 V Tj = 25 °C (1) minimum values (1) VGS = -1.5 V (2) typical values (2) VGS = -1.8 V (3) maximum values (3) VGS = -2.0 V -0.3 -0.4 ID (A) -0.5 (4) VGS = -2.5 V (5) VGS = -4.5 V Fig 21.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa368 2.0 a 017aaa369 -1.5 (1) VGS(th) (V) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 -60 0 60 120 Tj (°C) 180 0.0 -60 0 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values Fig 25. TR2; Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa370 102 (1) C (pF) Fig 26.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 017aaa372 -0.5 VDS IS (A) -0.4 ID VGS(pl) -0.3 VGS(th) -0.2 VGS QGS1 QGS2 QGS QGD QG(tot) (1) -0.1 (2) 017aaa137 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 29. Gate charge waveform definitions Fig 30. TR2; Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 31.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 33. Reflow soldering footprint for SOT666 PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMDT290UCE v.1 20111006 Product data sheet - - PMDT290UCE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 October 2011 © NXP B.V. 2011. All rights reserved.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PMDT290UCE NXP Semiconductors 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .
