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PMDXB600UNE

20 V, dual N-channel Trench MOSFET

16 September 2013 Product data sheet

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1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

•

Exposed drain pad for excellent thermal conduction

•

ElectroStatic Discharge (ESD) protection > 1 kV HBM

•

Drain-source on-state resistance R

DSon

= 470 mΩ

3. Applications

•

Relay driver

•

High-speed line driver

•

Low-side load switch

•

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

drain-source voltage - - 20 V

gate-source voltage

= 25 °C

-8 - 8 V

drain current V

= 4.5 V; T

amb

= 25 °C [1] - - 600 mA

Static characteristics (per transistor)

DSon

drain-source on-state

resistance

= 4.5 V; I

= 600 mA; T

= 25 °C - 470 620 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm

Summary of content (15 pages)

PAGE 1
DF N1 0 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 Simplified outline Graphic symbol source TR1 D2 D1 1 6 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 7 2 3 G1 5 8 G2 4 S1 S2 017aaa256 6. Ordering information Table 3.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -8 8 V ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C [1] - 600 mA VGS = 4.5 V; Tamb = 100 °C [1] - 400 mA - 2.5 A [2] - 265 mW [1] - 380 mW - 4025 mW - 0.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. - 25 25 75 0 - 75 125 175 Tamb (°C) Normalized total power dissipation as a function of ambient temperature Fig. 3.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point [1] [2] Conditions Min Typ Max Unit - 27 31 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . aaa-006902 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-008998 2.5 ID (A) aaa-008999 10-3 4.5 V ID (A) 2.0 2.5 V 10-4 1.5 min 1.0 1.8 V 0.5 typ max 10-5 1.5 V VGS = 1.2 V 0 Fig. 7. 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-009000 3 RDSon (Ω) 1.5 V 1.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-009002 2.5 aaa-009003 2.0 ID (A) a 2.0 1.5 1.5 1.0 1.0 Tj = 150 °C 0.5 0 0 1 Tj = 25 °C 2 0.5 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-009004 1.5 0 60 120 180 Fig. 12.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET aaa-009006 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.1 0.2 0.3 Fig. 16. MOSFET transistor: Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-009007 2.5 IS (A) 2.0 1.5 1.0 0.5 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 1.2 1.6 2.0 VSD (V) VGS = 0 V Fig. 17.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 12. Package outline 0.35 0.35 0.15 0.23 1 3 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 2 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 19. Package outline DFN1010B-6 (SOT1216) PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1216_fr Fig. 20.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMDXB600UNE v.1 20130916 Product data sheet - - PMDXB600UNE Product data sheet All information provided in this document is subject to legal disclaimers. 16 September 2013 © NXP N.V. 2013.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PMDXB600UNE NXP Semiconductors 20 V, dual N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ..................................