Datasheet

NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
PMDXB600UNE All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 16 September 2013 7 / 15
V
DS
(V)
0 431 2
aaa-008998
1.0
1.5
0.5
2.0
2.5
I
D
(A)
0
4.5 V
2.5 V
1.8 V
V
GS
= 1.2 V
1.5 V
T
j
= 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
aaa-008999
V
GS
(V)
0 1.51.00.5
10
-4
10
-5
10
-3
I
D
(A)
10
-6
min typ max
T
j
= 25 °C; V
DS
= 5 V
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
I
D
(A)
0 2.52.01.0 1.50.5
aaa-009000
1
2
3
R
DSon
(Ω)
0
V
GS
= 4.5 V
1.2 V
1.5 V
1.8 V
2 V
2.5 V
3 V
T
j
= 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 542 31
aaa-009001
1
2
3
R
DSon
(Ω)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= 0.6 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values