SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Low RDSon Very fast switching Trench MOSFET technology 3. Applications • • • • Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information Table 3. Ordering information Type number Package PMF170XP Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature -55 150 °C storage temperature -65 150 °C - -0.4 A Source-drain diode IS source current Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa300 -10 Limit RDSon = VDS/ID ID (A) (1) -1 (2) -10 -1 (3) (4) (5) -10 -2 -10 -1 -1 -10 -10 2 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms 2 (5) DC; Tamb = 25 °C; drain mounting pad 6 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa301 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0 0.01 1 10- 3 10- 2 10- 1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa302 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 10 0.02 0 0.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S total gate charge VDS = -10 V; ID = -1 A; VGS = -4.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa303 -4 - 4.5 V ID (A) VGS = - 3.5 V ID (A) - 3.0 V -3 017aaa129 - 10- 3 - 2.5 V - 10- 4 - 2.0 V -2 (1) - 1.8 V (2) (3) - 10- 5 -1 - 1.5 V 0 Fig. 6. 0 -1 -2 -3 - 10- 6 0.0 -4 VDS (V) - 0.5 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa304 500 - 1.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa306 -4 ID (A) (1) 017aaa307 1.6 a (2) 1.4 -3 1.2 -2 1.0 -1 0.8 (1) (2) 0 0 -1 -2 VGS (V) 0.6 -60 -3 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa134 - 1.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 017aaa309 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 1 2 QG (nC) Fig. 15. Gate charge waveform definitions 3 ID = -1.0 A; VDS = -10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa310 -2.0 IS (A) -1.5 (1) -1.0 (2) -0.5 0.0 0.0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 12. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 1.3 0.4 0.3 0.25 0.10 Dimensions in mm 04-11-04 Fig. 18. Package outline SC-70 (SOT323) PMF170XP Product data sheet All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMF170XP v.2 20131029 Product data sheet - PMF170XP v.1 Modifications: • PMF170XP v.1 20110902 Product data sheet - - PMF170XP Product data sheet Figure 13 corrected All information provided in this document is subject to legal disclaimers. 29 October 2013 © NXP N.V. 2013.
PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PMF170XP NXP Semiconductors 20 V, 1 A P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ......................................
