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PMFPB8032XP

20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

combination

21 December 2012 Product data sheet

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1. General description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench

MOSFET technology and ultra low V

Maximum Efficiency General Application (MEGA)

Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

1.8 V R

DSon

rated for low-voltage gate drive

•

Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

•

Exposed drain pad for excellent thermal conduction

•

Integrated ultra low V

MEGA Schottky diode

3. Applications

•

Charging switch for portable devices

•

DC-to-DC converters

•

Power management in battery-driven portables

•

Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

MOSFET transistor

drain-source voltage - - -20 V

gate-source voltage

= 25 °C

-12 - 12 V

drain current V

= -4.5 V; T

amb

= 25 °C; t ≤ 5 s [1] - - -3.7 A

Schottky diode

forward current T

≤ 105 °C - - 2 A

reverse voltage T

amb

= 25 °C - - 20 V

MOSFET transistor static characteristics

DSon

drain-source on-state

resistance

= -4.5 V; I

= -2.7 A; T

= 25 °C - 80 102 mΩ

Summary of content (16 pages)

PAGE 1
PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • 1.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; Tj = 25 °C - 320 365 mV Schottky diode VF forward voltage [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 n.c.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions VGS gate-source voltage ID drain current Min Max Unit -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.7 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.7 A - -11 A [2] - 485 mW [1] - 1100 mW - 6250 mW - -1.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature Fig. 2.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 9. Thermal characteristics Table 6.
PAGE 6
PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa565 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 10-1 1 102 10 tp (s) 103 2 MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa082 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa083 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.25 0.1 10 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 6 cm Fig. 7. 1 102 10 103 tp (s) 2 Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 550 - pF Coss output capacitance Tj = 25 °C - 63 - pF Crss reverse transfer capacitance - 53 - pF td(on) turn-on delay time VDS = -10 V; ID = -2.4 A; VGS = -4.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa533 0.25 RDSon (Ω) RDSon (Ω) 0.20 -1.6 V 0.15 0.3 -1.8 V 0.2 -2.5 V -4.5 V 0.10 Tj = 25 °C 0.1 0.05 0 017aaa534 0.4 VGS = -1.4 V -1.3 V 0 -1 -2 -3 ID (A) 0 -4 Tj = 25 °C Tj = 150 °C 0 -1 -2 -3 VGS (V) -4 ID = -3 A Fig. 10. MOSFET transistor: Drain-source on-state Fig. 11.
PAGE 10
PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa537 -2.0 017aaa538 103 VGS(th) (V) Ciss -1.5 C (pF) max 102 -1.0 typ Coss min -0.5 Crss 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 14. MOSFET transistor: Gate-source threshold voltage as a function of junction temperature Fig. 15.
PAGE 11
PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa540 -4 017aaa084 10 IF (A) IS (A) (1) (2) 1 -3 10- 1 (3) -2 (4) (5) 10- 2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 10- 3 -1.2 VSD (V) 10- 4 0.0 -1.4 VGS = 0 V 0.2 0.4 0.6 0.8 VF (V) 1.0 (1) Tj = 150 °C (2) Tj = 125 °C Fig. 18. MOSFET transistor: Source current as a function of source-drain voltage; typical values (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C Fig. 19.
PAGE 12
PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 017aaa087 2.4 (1) IF(AV) (A) 1.6 (2) (3) 0.8 0.0 (4) 0 25 FR4 PCB, mounting pad for cathode 6 cm Tj = 150 °C 50 75 100 125 150 175 Tamb (°C) 2 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 22. Schottky diode: Average forward current as a function of ambient temperature; typical values 11.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 12. Package outline 2.1 1.9 0.65 max 1.1 0.9 0.77 0.57 (2×) 2.1 1.9 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig. 24. Package outline DFN2020-6 (SOT1118) 13. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15.
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PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PAGE 16
PMFPB8032XP NXP Semiconductors 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .......