PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified 3.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter VGS gate-source voltage ID drain current [1] Conditions VGS = -4.5 V; Tamb = 25 °C [1] Min Typ Max Unit -8 - 8 V - - -500 mA 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions ID drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET aaa-007203 -10 Limit RDSon = VDS/ID ID (A) -1 tp = 1 ms -10-1 -10-2 -10-1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 tp = 100 ms -1 -10 -102 VDS (V) IDM = single pulse Fig. 4. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 102 10 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 10 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 0.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.25 102 10 0.75 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 7. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 102 10 0.25 0.75 0.33 0.2 0.1 0.05 0 0.02 0.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.5 0.75 0.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.5 -0.8 -1.3 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA VGS = 8 V; VDS = 0 V; - - 10 µA - - -10 µA VGS = -4.5 V; ID = -400 mA; Tj = 25 °C - 670 850 mΩ VGS = -4.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa351 0.7 ID (A) 0.6 4.5 V 2.5 V 1.8 V 017aaa352 10- 3 VGS = 1.6 V ID (A) 0.5 10- 4 0.4 1.4 V 0.3 (1) (2) 0.50 0.75 (3) 10- 5 0.2 1.2 V 0.1 1.0 V 0.0 Fig. 9. 0 1 2 3 VDS (V) 10- 6 0.00 4 0.25 Tj = 25 °C Tj = 25 °C; VDS = 5 V TR1; Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values 1.00 1.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa355 0.7 ID (A) 0.6 017aaa356 1.75 a 1.50 0.5 1.25 0.4 0.3 1.00 0.2 (2) (1) 0.75 0.1 0.0 0.0 0.5 1.0 1.5 0.50 -60 2.0 2.5 VGS (V) VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 14. TR1; Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 13.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa359 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0.0 0.1 0.2 0.3 Fig. 18. Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.5 A; VDS = 10 V; Tamb = 25 °C Fig. 17. TR1; Gate-source voltage as a function of gate charge; typical values 017aaa360 0.7 IS (A) 0.6 017aaa363 -0.5 -4.5 V ID (A) -2.5 V -2.0 V -0.4 VGS = -1.8 V 0.5 -0.3 0.4 (1) (2) -1.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa364 -10-3 017aaa365 4 RDSon (Ω) ID (A) (1) (2) (3) 3 -10-4 (1) (2) (3) 2 (4) -10-5 1 -10-6 0.0 -0.5 -1.0 VGS (V) 0 0.0 -1.5 (5) -0.1 -0.2 Tj = 25 °C; VDS = -5 V Tj = 25 °C (1) minimum values (2) typical values (3) maximum values (1) VGS = -1.5 V -0.3 -0.4 ID (A) -0.5 (2) VGS = -1.8 V (3) VGS = -2.0 V (4) VGS = -2.5 V Fig. 21.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa368 2.0 017aaa369 -1.5 a (1) VGS(th) (V) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 -60 0 60 120 Tj (°C) 0.0 -60 180 0 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS Fig. 25. TR2; Normalized drain-source on-state resistance as a function of ambient temperature; typical values (1) maximum values (2) typical values (3) minimum values Fig. 26.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 017aaa372 -0.5 VDS IS (A) ID -0.4 VGS(pl) -0.3 VGS(th) VGS -0.2 QGS1 QGS2 QGS QGD QG(tot) (1) -0.1 (2) 017aaa137 0.0 0.0 Fig. 29. Gate charge waveform definitions -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig. 30.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 31. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig. 33. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 34.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMGD290UCEA v.3 20140328 Product data sheet - PMGD290UCEA v.2 Modifications: • PMGD290UCEA v.2 20130418 Product data sheet - PMGD290UCEA v.1 PMGD290UCEA v.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
PMGD290UCEA NXP Semiconductors 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ...................
