Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMGD290XN,115, MOSFET

PMGD290XN

Dual N-channel µTrenchMOS™ extremely low level FET

Rev. 01 — 26 February 2004 Product data

MBD128

1. Product proﬁle

1.1 Description

Dual N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

■ Surface mounted package ■ Footprint 40% smaller than SOT23

■ Dual device ■ Fast switching

■ Low on-state resistance ■ Low threshold voltage.

■ Driver circuits ■ Switching in portable appliances.

■ V

≤ 20 V ■ I

≤ 0.86 A

■ P

tot

≤ 0.41 W ■ R

DSon

≤ 350 mΩ.

Table 1: Pinning - SOT363 (SC-88), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 source (s1)

SOT363 (SC-88)

2 gate (g1)

3 drain (d2)

4 source (s2)

5 gate (g2)

6 drain (d1)

MSA370

123

654

Top view

MSD901

Summary of content (12 pages)

PAGE 1
PMGD290XN Dual N-channel µTrenchMOS™ extremely low level FET Rev. 01 — 26 February 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Surface mounted package ■ Dual device ■ Low on-state resistance ■ Footprint 40% smaller than SOT23 ■ Fast switching ■ Low threshold voltage. 1.3 Applications ■ Driver circuits ■ Switching in portable appliances. 1.
PAGE 2
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 3. Ordering information Table 2: Ordering information Type number PMGD290XN Package Name Description Version SC-88 Plastic surface mounted package; 6 leads SOT363 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 3
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 0 200 50 100 150 Tsp (°C) P tot P der = ----------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature.
PAGE 4
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to solder point Figure 4 Rth(j-sp) Min Typ Max Unit - - 300 K/W 5.1 Transient thermal impedance 03an28 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 0.1 0.05 0.02 10 single pulse δ= P tp T t tp T 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4.
PAGE 5
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 1 µA; VGS = 0 V Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V Tj = 25 °C 0.5 1 1.5 V Tj = 150 °C 0.35 - - V Tj = −55 °C - - 1.
PAGE 6
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 03am96 2.5 4.5 V ID (A) ID (A) 3V 2 03am98 2.5 3.5 V VDS > ID x RDSon 2 1.5 25 °C Tj = 150 °C 1.5 2.5 V 1 1 0.5 0.5 2V VGS = 1.8 V 0 0 0 0.5 1 1.5 2 VDS (V) Tj = 25 °C 0 1 2 3 4 VGS (V) 5 Tj = 25 °C and 150 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6.
PAGE 7
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 03al82 2 VGS(th) (V) ID (A) max 1.5 03an65 10-3 10-4 typ 1 min typ max 10-5 min 0.5 10-6 0 -60 0 60 120 Tj (°C) 180 0 0.4 0.8 1.2 1.6 VGS (V) Tj = 25 °C; VDS = 5 V ID = 0.25 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 8
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 03am99 1 IS (A) 0.8 03an01 5 VGS VGS = 0 V ID = 1 A (V) 4 Tj = 25 °C VDD = 10 V 0.6 3 0.4 2 150 °C Tj = 25 °C 0.2 1 0 0 0 0.3 0.6 0.9 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V 0 0.4 0.6 QG (nC) 0.8 ID = 1 A; VDD = 10 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13.
PAGE 9
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 7. Package outline Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 c bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
PAGE 10
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 8. Soldering 2.65 0.60 (2×) 0.40 0.90 2.10 (2×) 2.35 solder paste 0.50 (4×) solder lands 0.50 (4×) solder resist occupied area 1.20 2.40 MSA432 Dimensions in mm. Fig 15. Reflow soldering footprint for SOT363 (SC-88). 9. Revision history Table 6: Revision history Rev Date 01 20040226 CPCN Description - Product data (9397 750 12762). © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PAGE 11
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 12
PMGD290XN Philips Semiconductors Dual N-channel µTrenchMOS™ extremely low level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information .