Datasheet

1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
1.3 Applications
 Battery management  Load switching
1.4 Quick reference data
PMK30EP
P-channel TrenchMOS extremely low level FET
Rev. 04 — 25 October 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C - - -30 V
I
D
drain current T
sp
=25°C; V
GS
=-10V;
see Figure 1; see Figure 3
---14.
9
A
P
tot
total power dissipation T
sp
=25°C; see Figure 2 --6.9W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=-10V; I
D
=-9.2A;
T
j
=25°C; see Figure 9
- 1619mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=-10V; I
D
=-9.2A;
V
DS
=-15V; T
j
=25°C;
see Figure 11
; see Figure 12
-7-nC