Datasheet

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 02 — 29 May 2006 2 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
PML260SN HVSON8 plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 × 3.3 × 0.85 mm
SOT873-1
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C - 200 V
V
GS
gate-source voltage - ±20 V
I
D
drain current T
mb
=25°C; V
GS
= 10 V; see Figure 2 and 3 - 8.8 A
T
mb
= 100 °C; V
GS
= 10 V; see Figure 2 - 5.5 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; see Figure 3 -15A
P
tot
total power dissipation T
mb
=25°C; see Figure 1 -50W
T
stg
storage temperature −55 +150 °C
T
j
junction temperature −55 +150 °C
Source-drain diode
I
S
source current T
mb
=25°C - 8.8 A
I
SM
peak source current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 15 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I
D
= 3.5 A;
t
p
= 0.05 ms; V
DS
≤ 200 V; R
GS
=50Ω;
V
GS
= 10 V; starting at T
j
=25°C
-22mJ