Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPML340SN,118, MOSFET

1. Product proﬁle

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a

surface-mounted plastic package using TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

PML340SN

N-channel TrenchMOS standard level FET

Rev. 01 — 24 August 2006 Product data sheet

n Standard level threshold n Low proﬁle and small footprint

n Very low thermal impedance n Low on-state resistance

n Primary side switching n DC-to-DC converters

n V

≤ 220 V n I

≤ 7.3 A

n R

DSon

≤ 386 mΩ n Q

= 4.25 nC (typ)

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1, 2, 3 source (S)

SOT873-1 (HVSON8)

4 gate (G)

5, 6, 7, 8 drain (D)

1234

8765

Transparent

top view

mbb076

Summary of content (12 pages)

PAGE 1
PML340SN N-channel TrenchMOS standard level FET Rev. 01 — 24 August 2006 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology. 1.2 Features n Standard level threshold n Very low thermal impedance n Low profile and small footprint n Low on-state resistance 1.3 Applications n Primary side switching n DC-to-DC converters 1.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number PML340SN Package Name Description Version HVSON8 plastic thermal enhanced very thin small outline package; no leads; SOT873-1 8 terminals; body 3.3 × 3.3 × 0.85 mm 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 03ne36 120 03ne37 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tmb (°C) 150 200 Tmb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to mounting base see Figure 4 Rth(j-mb) Min Typ Max Unit - - 2.5 K/W 003aab517 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 10-1 δ= P 0.02 tp T single pulse t tp T 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 220 - - V Tj = −55 °C 196 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 250 µA; VGS = 0 V ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 2 3 4 V Tj = 150 °C 1.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 003aab163 10 10 VGS (V) = ID (A) 5 003aab164 800 3.8 4 4.2 4.5 RDSon (mΩ) 8 600 4.5 6 VGS (V) = 400 4.4 5 10 4 4.2 200 2 4 3.8 0 0 0 1 2 3 4 VDS (V) 0 5 Tj = 25 °C 2 4 6 8 I (A) 10 D Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 03aa32 5 03aa35 10−1 ID (A) VGS(th) (V) 4 typ 10−3 min 10−4 3 2 min 10−2 max typ max 10−5 1 0 −60 0 60 120 180 Tj (°C) 10−6 0 2 4 6 VGS (V) Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 003aab167 10 IS (A) 003aab168 103 Ciss C (pF) 8 6 150 °C 102 4 Coss Tj = 25 °C 2 0 0.2 Crss 0.4 0.6 0.8 VSD (V) 1 Tj = 25 °C and 150 °C; VGS = 0 V 10 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 7. Package outline HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 × 3.3 × 0.85 mm SOT873-1 X B D A E terminal 1 index area A A1 c detail X terminal 1 index area e1 C v w b e 1 M M y y1 C C A B C 4 L1 Eh L2 8 5 Dh 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 b 0.05 0.35 0.00 0.25 c D Dh E 0.2 3.4 3.2 2.3 2.2 3.4 3.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PML340SN_1 20060824 Product data sheet - - PML340SN_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev.
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PML340SN Philips Semiconductors N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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Philips Semiconductors PML340SN N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . .