PMN27XPE 20 V, single P-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Fast switching • Trench MOSFET technology • 2 kV ESD protection 1.3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G TSOP6 (SOT457) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package PMN27XPE Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Tj Conditions Min Max Unit junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa760 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-2 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-1 0 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa761 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa762 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter RDSon drain-source on-state resistance gfs forward transconductance Conditions Min Typ Max Unit VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 27 30 mΩ VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 56 64 mΩ VGS = -2.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa764 120 -1.8 V -2 V -2.2 V 017aaa765 120 -2.4 V RDSon (mΩ) RDSon (mΩ) -2.5 V 80 80 -3 V 40 Tj = 150 °C 40 -4.5 V Tj = 25 °C VGS = -8 V 0 0 -8 -16 ID (A) 0 -24 Tj = 25 °C Fig. 8. 0 -2 -4 VGS (V) -6 ID = -3 A Drain-source on-state resistance as a function of drain current; typical values 017aaa766 -24 Fig. 9.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa768 -1.5 VGS(th) (V) C (pF) max -1.0 017aaa769 104 Ciss 103 typ Coss min Crss 102 -0.5 0 -60 0 60 120 Tj (°C) 10 180 ID = -0.25 mA; VDS = VGS 0 -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa771 -5 IS (A) -4 -3 -2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.95 1.9 0.40 0.25 Dimensions in mm 0.26 0.10 04-11-08 Fig. 18.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 19. Reflow soldering footprint for TSOP6 (SOT457) 5.3 1.5 (4×) solder lands 1.475 solder resist 0.45 (2×) 5.05 occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 20.
PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
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PMN27XPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ....................................
