Datasheet
NXP Semiconductors
PMN27XPE
20 V, single P-channel Trench MOSFET
PMN27XPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 20 September 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 25 °C - 27 30 mΩ
V
GS
= -4.5 V; I
D
= -3 A; T
j
= 150 °C - 56 64 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -2.5 V; I
D
= -3 A; T
j
= 25 °C - 39 44 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -3 A; T
j
= 25 °C - 16 - S
Dynamic characteristics
Q
G(tot)
total gate charge - 15 22.5 nC
Q
GS
gate-source charge - 3 - nC
Q
GD
gate-drain charge
V
DS
= -10 V; I
D
= -3 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 3 - nC
C
iss
input capacitance - 1770 - pF
C
oss
output capacitance - 254 - pF
C
rss
reverse transfer
capacitance
V
DS
= -10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 180 - pF
t
d(on)
turn-on delay time - 15 - ns
t
r
rise time - 22 - ns
t
d(off)
turn-off delay time - 37 - ns
t
f
fall time
V
DS
= -10 V; I
D
= -3 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 29 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -1.3 A; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
V
DS
(V)
0 -4-3-1 -2
017aaa763
-8
-16
-24
I
D
(A)
0
-8 V
-4.5 V
-3 V
-2.5 V
V
GS
= -2.4 V
-2.2 V
-2 V
-1.8 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa129
V
GS
(V)
0.0 - 1.5- 1.0- 0.5
- 10
- 4
- 10
- 5
- 10
- 3
I
D
(A)
- 10
- 6
(2)(1) (3)
T
j
= 25 °C; V
DS
= -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage