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PMPB11EN

30 V N-channel Trench MOSFET

14 January 2014 Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

Very fast switching

•

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

•

Exposed drain pad for excellent thermal conduction

•

Tin-plated 100 % solderable side pads for optical solder inspection

3. Applications

•

Charging switch for portable devices

•

DC-to-DC converters

•

Power management in battery-driven portables

•

Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage - - 30 V

gate-source voltage

= 25 °C

-20 - 20 V

drain current V

= 10 V; T

amb

= 25 °C; t ≤ 5 s [1] - - 13 A

Static characteristics

DSon

drain-source on-state

resistance

= 10 V; I

= 9 A; T

= 25 °C - 12 14.5 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

Summary of content (15 pages)

PAGE 1
DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 4 Transparent top view G S 017aaa253 DFN2020MD-6 (SOT1220) 6. Ordering information Table 3.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 13 A VGS = 10 V; Tamb = 25 °C [1] - 9 A VGS = 10 V; Tamb = 100 °C [1] - 5.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa553 102 ID (A) Limit RDSon = VDS/ID tp = 10 µs 10 tp = 100 µs tp = 1 ms 1 tp = 10 ms DC; Tsp = 25 °C 10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa542 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.2 0.5 0.25 0.1 10 0.05 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 0.2 0.5 0.25 0.1 0.05 0 1 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa554 25 ID (A) VGS = 5 V 2.9 V ID (A) 2.7 V 20 017aaa555 10-3 3V 10-4 15 min typ max 2.5 V 10 10-5 2.3 V 5 2.1 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 0.0 4 0.5 1.0 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage 017aaa556 50 RDSon (mΩ) 2.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa558 25 017aaa559 1.8 ID (A) a 20 1.4 15 10 1.0 5 0 Tj = 150 °C 0 1 Tj = 25 °C 2 VGS (V) 0.6 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa560 2.5 60 120 017aaa561 103 typ 1.0 min Ciss Coss 102 Crss 0.5 0.0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 0.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 017aaa562 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 5 10 QG (nC) Fig. 15. Gate charge waveform definitions 15 ID = 5 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa552 2.5 IS (A) 2.0 1.5 1.0 Tj = 150 °C Tj = 25 °C 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V Fig. 16.
PAGE 10
PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 12. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 1.1 1.3 1.9 2.1 Dimensions in mm 0.25 0.35 0.65 12-04-30 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB11EN Product data sheet All information provided in this document is subject to legal disclaimers. 14 January 2014 © NXP N.V. 2014.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB11EN v.2 20140114 Product data sheet - PMPB11EN v.1 Modifications: • • PMPB11EN v.1 PMPB11EN Product data sheet Table 7: parameter value of VDS corrected from 10 V to 15 V in capacitance condition. Figure 16: VSD parameter corrected.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PMPB11EN NXP Semiconductors 30 V N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ...........................................