Datasheet

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1. Product proﬁle

1.1 General description

PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)

plastic package.

NPN complement: PMST3904.

1.2 Features

n Collector current: I

≤−200 mA

n Collector-emitter voltage: V

CEO

≤−40 V

n Very small SMD plastic package

1.3 Applications

n General ampliﬁcation and switching

1.4 Quick reference data

2. Pinning information

PMST3906

40 V, 200 mA PNP switching transistor

Rev. 05 — 29 April 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −40 V

collector current - - −200 mA

Table 2. Pinning

Pin Description Simpliﬁed outline Graphic symbol

1 base

2 emitter

3 collector

sym013

Summary of content (10 pages)

PAGE 1
PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904. 1.2 Features n Collector current: IC ≤ −200 mA n Collector-emitter voltage: VCEO ≤ −40 V n Very small SMD plastic package 1.3 Applications n General amplification and switching 1.4 Quick reference data Table 1.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 3. Ordering information Table 3. Ordering information Type number PMST3906 Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] PMST3906 *2A [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 4
PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor mhc459 600 hFE 006aab475 −250 IC (mA) IB (mA) = −1.5 −200 −1.35 (1) −1.20 400 −150 −0.90 −0.75 −0.60 −100 (2) −1.05 −0.45 200 −0.30 (3) 0 −10−1 −1 −50 −10 −102 IC (mA) 0 −103 VCE = −1 V −0.15 0 −2 −4 −6 −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. DC current gain as a function of collector current; typical values mhc461 −1200 VBE (mV) Fig 2.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor mhc463 −103 VCEsat (mV) (1) (2) −102 (3) −10 −10−1 −1 −102 −10 IC (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VI = 5 V; t = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 7. 04-11-04 Package outline SOT323 (SC-70) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 7
PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 11. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) Fig 8. sot323_fr Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 9.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMST3906_5 20090429 Product data sheet - PMST3906_4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMST3906 NXP Semiconductors 40 V, 200 mA PNP switching transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .