SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number PMV160UP Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV160UP NH% [1] % = placeholder for manufacturing site code PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb 25 °C - -1.2 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa339 –10 Limit RDSon = VDS/ID ID (A) (1) –1 (2) –10–1 (3) (4) (5) –10–2 –10–1 –1 –10 VDS (V) –102 IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 325 374 K/W [2] - 227 260 K/W - 50 60 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa342 –4 –4.5 V 017aaa343 –10–3 –2.5 V ID (A) VGS = –2.0 V –2.3 V ID (A) –3 –1.8 V –10–4 –1.7 V (1) –2 (3) (2) –1.5 V –10–5 –1.4 V –1 0 0 –1 –2 –3 VDS (V) –4 –10–6 –0.1 Tj = 25 °C –0.3 –0.5 –0.7 –0.9 –1.1 VGS (V) Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa346 –4 017aaa147 2.0 a ID (A) (1) (2) –3 1.5 –2 1.0 0.5 –1 (2) 0 0 (1) –1 –2 VGS (V) –3 0.0 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa148 –1.2 VGS(th) (V) Fig 11.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 017aaa348 –5 VDS VGS (V) ID –4 VGS(pl) –3 VGS(th) VGS –2 QGS1 QGS2 QGS –1 QGD QG(tot) 017aaa137 0 0 1 2 3 QG (nC) 4 ID = -1.0 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa349 –2.0 IS (A) –1.5 –1.0 (1) (2) –0.5 0.0 0.0 –0.4 –0.8 VSD (V) –1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMV160UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 © NXP B.V. 2011. All rights reserved.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV160UP v.2 20111206 Product data sheet - PMV160UP v.1 Modifications: PMV160UP v.1 PMV160UP Product data sheet • 7 “Characteristics”: VGSth condition is corrected 20110907 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 December 2011 - © NXP B.V.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PMV160UP NXP Semiconductors 20 V, 1.2 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . .
