Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMV32UP,215, MOSFET

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 1.8 V drain-source on-state resistance

rated

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

PMV32UP

20 V, 4 A P-channel Trench MOSFET

Rev. 1 — 11 March 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

=25°C ---20V

gate-source

voltage

-8 - 8 V

drain current V

=-4.5V; T

amb

=25°C

[1]

---4A

Static characteristics

DSon

drain-source

on-state

resistance

=-4.5V; I

=-2.4A;

=25°C

- 3236mΩ

Summary of content (15 pages)

PAGE 1
SO T2 3 PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  1.8 V drain-source on-state resistance rated  Very fast switching  Trench MOSFET technology 1.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV32UP TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage V drain current ID total power dissipation Ptot 8 VGS = -4.5 V; Tamb = 25 °C - -4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 017aaa139 –102 ID (A) Limit RDSon = VDS/ID –10 (1) (2) –1 (3) (4) (5) –10–1 (6) –10–2 10–1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
PAGE 5
PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 017aaa140 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 10 0.02 0 0.01 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa141 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0.33 0.2 0.05 0.02 0 1 10–1 0.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 017aaa142 –16 017aaa143 –10–3 –2 V ID (A) ID (A) –4.5 V –1.8 V –2.5 V –12 –10–4 (1) (2) (3) –8 VGS = –1.5 V –10–5 –4 0 0 –1 –2 –3 –4 –5 VDS (V) –10–6 –0.2 Tj = 25 °C –0.4 –0.6 –0.8 VGS (V) –1.0 Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa144 0.10 RDSon (Ω) (1) 0.08 Fig 7.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 017aaa146 –16 ID (A) 017aaa147 2.0 a (1) –12 (2) 1.5 –8 1.0 –4 (2) 0 0.0 –0.5 –1.0 0.5 (1) –1.5 VGS (V) –2.0 0.0 –60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa148 –1.2 Fig 11.
PAGE 9
PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 017aaa150 –4.5 VDS VGS (V) ID –3.0 VGS(pl) VGS(th) VGS –1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 4 8 12 QG (nC) 16 ID = -2.4 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa151 –16 IS (A) –12 (1) –8 (2) –4 –0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
PAGE 10
PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
PAGE 11
PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV32UP v.1 20110311 Product data sheet - - PMV32UP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 11 March 2011 © NXP B.V. 2011. All rights reserved.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PMV32UP NXP Semiconductors 20 V, 4 A P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . .