Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMV33UPE,215, MOSFET

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 Trench MOSFET technology

 2 kV ESD protected

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm

PMV33UPE

20 V, single P-channel Trench MOSFET

Rev. 1 — 12 June 2012 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C ---20V

gate-source voltage -8 - 8 V

drain current V

=-4.5V; T

amb

=25°C; t ≤ 5 s

[1]

---5.3A

Static characteristics

DSon

drain-source on-state

resistance

=-4.5V; I

=-3A; T

= 25 °C - 30 36 mΩ

Summary of content (15 pages)

PAGE 1
SO T2 3 PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Trench MOSFET technology  Very fast switching  2 kV ESD protected 1.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV33UPE TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s - -5.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa601 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms tp = 10 ms -1 tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 0 -1 -102 -10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
PAGE 5
PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa602 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa603 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 1 10-3 0.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa604 -20 -4.5 V ID (A) -2.5 V -2.2 V 017aaa143 –10–3 VGS = -2 V ID (A) -3 V -15 –10–4 -1.8 V (1) (2) (3) -10 -1.6 V –10–5 -5 -1.4 V -1.2 V 0 0 -1 -2 -3 -4 –10–6 –0.2 –0.4 –0.6 –0.8 VDS (V) –1.0 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa607 -18 017aaa608 1.50 a ID (A) 1.25 -12 1.00 -6 0.75 Tj = 150 °C Tj = 25 °C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) 0.50 -60 0 60 120 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa609 -1.2 Fig 11.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa611 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 5 10 15 QG (nC) ID = −4.4 A; VDS = −10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa612 -5 IS (A) -4 -3 -2 Tj = 150 °C -1 Tj = 25 °C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V Fig 16.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 18. Package outline SOT23 (TO-236AB) PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV33UPE v.1 20120612 Product data sheet - - PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . .