Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMV48XP,215, MOSFET

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Trench MOSFET technology

 Very fast switching

1.3 Applications

 High-side loadswitch

 High-speed line driver

 Relay driver

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

PMV48XP

20 V, 3.5 A P-channel Trench MOSFET

Rev. 1 — 21 December 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

amb

=25°C ---20V

gate-source

voltage

-12 - 12 V

drain current V

=-4.5V; T

amb

=25°C

[1]

---3.5A

Static characteristics

DSon

drain-source

on-state

resistance

=-4.5V; I

=-2.4A;

pulsed; t

≤ 300 µs; δ≤0.01;

=25°C

- 4855mΩ

Summary of content (15 pages)

PAGE 1
PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications High-side loadswitch Relay driver High-speed line driver Switching circuits 1.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV48XP TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage ID drain current total power dissipation Ptot 12 V [1] - -3.5 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.2 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -12 VGS = -4.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa125 −102 ID (A) Limit RDSon = VDS/ID −10 (1) (2) −1 (3) (4) (5) −10−1 (6) −10−2 −10−1 −1 −10 −102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa126 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 10 0.02 0 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa127 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0 1 10−3 0.33 0.2 0.05 0.02 0.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa128 −14 ID (A) −12 VGS = −4.5 V −3 V −2.25 V −10 017aaa129 −10−3 ID (A) −10−4 −8 (1) (2) (3) −6 −2 V −10−5 −4 −1.8 V −2 0 −1 0 −2 −3 −4 −5 VDS (V) −10−6 0.0 Tj = 25 °C −0.5 −1.0 VGS (V) − 1.5 Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa130 0.20 RDSon (Ω) (1) Fig 7.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa132 −14 ID (A) −12 017aaa133 2.0 a (1) (2) 1.5 −10 −8 1.0 −6 −4 (2) 0.5 (1) −2 0 0.0 −1.0 −2.0 VGS (V) −3.0 0.0 −60 0 60 120 180 Tj (°C) VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa134 −1.6 VGS(th) (V) Fig 11.
PAGE 9
PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa136 −4.5 VDS VGS (V) ID −3.0 VGS(pl) VGS(th) VGS −1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 2 4 6 8 10 QG (nC) ID = -2.4 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa138 −14 IS (A) −12 −10 −8 (1) (2) −6 −4 −2 0 0.0 −0.4 −0.8 VSD (V) −1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV48XP v.1 20101221 Product data sheet - - PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . .