PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology • Low threshold voltage 1.3 Applications • Relay driver • High-side loadswitch • Switching circuits 1.4 Quick reference data Table 1.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 G 2 TO-236AB (SOT23) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package PMV50UPE Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions [1] Tsp = 25 °C Min Max Unit - 955 mW - 3570 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1 A HBM [3] - 3000 V ESD maximum rating VESD electrostatic discharge voltage [1] [2] [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper,
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa691 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa692 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa693 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 10 0.1 0.02 0.05 0.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C - 50 66 mΩ VGS = -4.5 V; ID = -3.2 A; Tj = 150 °C - 73 96 mΩ VGS = -2.5 V; ID = -2.1 A; Tj = 25 °C - 57 81 mΩ VGS = -1.8 V; ID = -2.1 A; Tj = 25 °C - 70 110 mΩ VDS = -5 V; ID = -3.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa696 140 RDSon (mΩ) 120 -1.5 V 017aaa697 200 -1.8 V RDSon (mΩ) 160 100 120 -2 V 80 -2.5 V 60 80 VGS = -4.5 V 40 Tj = 150 °C 40 20 0 0 -4 -8 ID (A) 0 -12 Tj = 25 °C Fig. 8. Tj = 25 °C 0 -4 -8 VGS (V) -12 ID = -1 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa700 -1.5 017aaa701 103 C (pF) VGS(th) (V) 102 -1.0 Ciss max Coss typ -0.5 min 0 -60 0 Crss 10 60 120 Tj (°C) 1 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa703 -12 IS (A) -8 -4 Tj = 150 °C 0 0 -0.4 Tj = 25 °C -0.8 -1.2 VSD (V) -1.6 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig. 18.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV50UPE v.1 20120720 Product data sheet - - PMV50UPE Product data sheet All information provided in this document is subject to legal disclaimers. 20 July 2012 © NXP B.V. 2012.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PMV50UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ....................................
