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PMXB40UNE

12 V, N-channel Trench MOSFET

27 September 2013 Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

•

Trench MOSFET technology

•

Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

•

Exposed drain pad for excellent thermal conduction

•

ElectroStatic Discharge (ESD) protection 1 kV

•

Very low Drain-Source on-state resistance R

DSon

= 34 mΩ

•

Very low threshold voltage of 0.65 V for portable applications

3. Applications

•

Low-side load switch and charging switch for portable devices

•

Power management in battery-driven portables

•

LED driver

•

DC-to-DC converters

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage - - 12 V

gate-source voltage

= 25 °C

-8 - 8 V

drain current V

= 4.5 V; T

amb

= 25 °C [1] - - 3.2 A

Static characteristics

DSon

drain-source on-state

resistance

= 4.5 V; I

= 3.2 A; T

= 25 °C - 34 45 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

Summary of content (15 pages)

PAGE 1
DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • • Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 4 D drain Simplified outline Graphic symbol D 1 4 3 G 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 12 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 3.2 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.5 A - 15 A [2] - 0.4 W [1] - 1.07 W - 8.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008985 102 ID (A) tp = 10 µs 10 tp = 100 µs tp = 1 ms 1 DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-1 10-2 10-1 tp = 100 ms 1 10 102 VDS(V) IDM = single pulse Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
PAGE 5
PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008918 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 0.01 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-008919 duty cycle = 1 0.75 0.5 0.33 Zth(j-a) (K/W) 102 10 0.02 0.01 0 1 10-3 0.25 0.2 0.1 0.05 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 12 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008986 12 4.5 V 2.5 V 1.8 V ID (A) ID (A) 10-3 1.6 V 8 aaa-008987 10-2 min typ max 1.5 V 10-4 1.4 V 4 10-5 1.2 V VGS = 1.0 V 0 Fig. 7. 0 1 2 3 10-6 4 VDS(V) 0 0.5 1 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 8. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-008988 120 1.3 V 1.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008990 10 aaa-008991 2 ID (A) a 8 1.5 6 1 4 0.5 2 0 Tj = 150 °C Tj = 25 °C 0 0.5 1 1.5 VGS (V) 0 -60 2 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-008992 1.25 0 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-008993 103 VGS(th) (V) Ciss 1.00 C (pF) 0.
PAGE 9
PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET aaa-008994 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0 2 4 6 QG (nC) Fig. 16. MOSFET transistor: Gate charge waveform definitions 8 ID = 3.2 A; VDS = 10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values aaa-008995 2 Is (A) 1.5 1 Tj = 150 °C 0.5 Tj = 25 °C 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 17.
PAGE 10
PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 12. Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology (2x) solderable lead end, protrusion max. 0.
PAGE 11
PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 20.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMXB40UNE v.1 20130927 Product data sheet - - PMXB40UNE Product data sheet All information provided in this document is subject to legal disclaimers. 27 September 2013 © NXP N.V. 2013.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
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PMXB40UNE NXP Semiconductors 12 V, N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .........................................