Datasheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010 Product data sheet
BOTTOM VIEW
Fast switching Saves PCB space due to small footprint
(90 % smaller than SOT23)
Low conduction losses due to low
on-state resistance
Suitable for use in compact designs due
to low profile (55 % lower than SOT23)
Driver circuits Switching in portable appliances
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 150 °C --30V
I
D
drain current T
amb
=25°C; V
GS
=10V;
see Figure 1
- - 480 mA
P
tot
total power dissipation T
amb
=25°C; see Figure 2 - - 350 mW
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
=0.2A;
T
j
=25°C; see Figure 8
--1Ω