Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMZ390UN,315, MOSFET

1. Product proﬁle

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

PMZ390UN

N-channel TrenchMOS standard level FET

Rev. 01 — 12 July 2007 Product data sheet

BOTTOM VIEW

n Proﬁle 55 % lower than SOT23 n Footprint 90 % smaller than SOT23

n Low on-state resistance n Fast switching

n Leadless package n Standard level compatible threshold

n Driver circuits n Load switching in portable appliances

n V

≤ 30 V n I

≤ 1.78 A

n R

DSon

≤ 460 mΩ n P

tot

≤ 2.50 W

Table 1. Pinning

Pin Description Simpliﬁed outline Symbol

1 gate (G)

SOT883 (SC-101)

2 source (S)

3 drain (D)

Transparent

top view

mbb076

Summary of content (13 pages)

PAGE 1
PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Profile 55 % lower than SOT23 n Low on-state resistance n Leadless package n Footprint 90 % smaller than SOT23 n Fast switching n Standard level compatible threshold 1.
PAGE 2
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number PMZ390UN Package Name Description Version SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.
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PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P tot ( 25°C ) 50 100 150 Tsp (°C) 200 ID I der = -------------------- × 100 % I D ( 25°C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2.
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PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter thermal resistance from junction to solder point Rth(j-sp) see Figure 4 [1] thermal resistance from junction to ambient Rth(j-a) [1] Conditions Min Typ Max Unit - - 50 K/W - 670 - K/W Mounted on a printed-circuit board; vertical in still air. 003aab831 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 δ= P 0.
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PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain leakage current ID = 10 µA; VGS = 0 V ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 0.45 0.7 0.95 V Tj = 150 °C 0.
PAGE 6
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 03an94 2.5 4.5 ID (A) 3 03an95 1 2.5 RDSon (Ω) 2 2 VGS (V) = 1.8 0.8 2.5 2 1.5 0.6 3 1.8 4.5 1 0.4 VGS (V) = 1.5 0.5 0.2 0 0 0 0.5 1 1.5 VDS (V) 2 0 Tj = 25 °C 0.5 1 1.5 2 ID (A) 2.5 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03an96 2.5 03al00 1.
PAGE 7
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 03aj65 1.2 03am43 10-3 VGS(th) ID (A) (V) max 0.9 10-4 min typ max typ 0.6 min 10-5 0.3 10-6 0 -60 0 60 120 Tj (°C) 180 0 0.4 0.8 VGS (V) 1.2 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10.
PAGE 8
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 03an97 1 03an98 102 VGS = 0 V IS (A) C (pF) 0.8 Ciss 0.6 10 Coss 0.4 Crss 0.2 Tj = 25 °C 150 °C 0 0 0.2 0.4 0.6 0.8 VSD (V) 1 Tj = 25 °C and 150 °C; VGS = 0 V 1 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14.
PAGE 9
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 7. Package outline Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1.
PAGE 10
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 8. Soldering 1.30 R = 0.05 (12×) 0.30 R = 0.05 (12×) solder lands 0.35 (2×) solder resist 0.90 0.20 0.60 0.70 0.80 occupied area 0.25 (2×) solder paste 0.30 (2×) 0.40 (2×) 0.50 (2×) 0.30 0.40 0.50 MBL873 Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ390UN_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 9. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZ390UN _1 20070712 Product data sheet - - PMZ390UN_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
PAGE 12
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 13
PMZ390UN NXP Semiconductors N-channel TrenchMOS standard level FET 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .