PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.8 kV ESD protected 1.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G Simplified outline gate 2 S source 3 D drain Graphic symbol D 1 3 2 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number PMZB350UPE Package Name Description Version DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -8 8 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -1.4 A VGS = -4.5 V; Tamb = 25 °C [1] - -1 A VGS = -4.5 V; Tamb = 100 °C [1] - -0.7 A - -2.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 3.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - 35 40 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm , t ≤ 5 s. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa716 -3 ID (A) -8 V -3 V -4.5 V -2.5 V 017aaa143 -10 - 3 ID (A) VGS = -2.2 V -10 - 4 -2 -1.8 V -1 0 Fig. 7. (1) -1 -2 -3 VDS (V) -10 - 6 -0.2 -4 -0.4 -0.6 Tj = 25 °C Tj = 25 °C; VDS = -3 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 8. 017aaa717 1200 -1.4 V -1.8 V (3) -10 - 5 -1.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa719 -3 017aaa720 1.50 a ID (A) 1.25 -2 Tj = 25 °C Tj = 150 °C 1.00 -1 0.75 0 0 -1 -2 VGS (V) 0.50 -60 -3 VDS > ID × RDSon Fig. 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values VGS(th) (V) 60 120 Tj (°C) 180 Fig. 12. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa721 -1.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa723 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 0.5 1.0 QG (nC) Fig. 16. Gate charge waveform definitions 1.5 ID = −0.3 A; VDS = −10 V; Tamb = 25 °C Fig. 15. Gate-source voltage as a function of gate charge; typical values 017aaa724 -3 IS (A) -2 -1 Tj = 150 °C 0 0 -0.5 Tj = 25 °C -1.0 VSD (V) -1.5 VGS = 0 V Fig. 17.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig. 19. DFN1006B-3 (SOT883B) 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMZB350UPE v.1 20120801 Product data sheet - - PMZB350UPE Product data sheet All information provided in this document is subject to legal disclaimers. 1 August 2012 © NXP B.V. 2012.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PMZB350UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ..................................
