Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPMZB670UPE,315, MOSFET

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 Ultra thin package profile of 0.37 mm

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

PMZB670UPE

20 V, single P-channel Trench MOSFET

Rev. 3 — 23 March 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C ---20V

gate-source voltage -8 - 8 V

drain current V

=-4.5V; T

amb

=25°C

[1]

---680mA

Static characteristics

DSon

drain-source on-state

resistance

=-4.5V; I

= -400 mA; T

= 25 °C - 0.67 0.85 Ω

Summary of content (15 pages)

PAGE 1
83B PMZB670UPE SO T8 20 V, single P-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  ESD protection up to 2 kV  Low threshold voltage  Ultra thin package profile of 0.37 mm  Trench MOSFET technology 1.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 S source 1 3 D drain 2 Graphic symbol D 3 Transparent top view G DFN1006B-3 (SOT883B) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB670UPE DFN1006B-3 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C - -680 mA VGS = -4.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa375 -10 ID (A) Limit RDSon = VDS/ID -1 (1) (2) (3) -10-1 (4) (5) -10-2 -10-1 -1 -10 VDS (V) -102 IDM = single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 305 360 K/W [2] - 150 175 K/W - - 40 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.5 -0.9 -1.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa363 -0.5 -4.5 V ID (A) -2.5 V -2.0 V 017aaa364 -10-3 ID (A) -0.4 VGS = -1.8 V -10-4 -0.3 (1) (3) (2) -1.6 V -0.2 -10-5 -1.4 V -0.1 0.0 0 -1 -2 -3 VDS (V) -4 -10-6 0.0 Tj = 25 °C -0.5 -1.0 VGS (V) -1.5 Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 7.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa367 -0.5 ID (A) 017aaa368 2.0 a -0.4 1.5 -0.3 1.0 -0.2 (2) (1) 0.5 -0.1 0.0 0.0 -0.5 -1.0 -1.5 VGS (V) -2.0 0.0 -60 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 11. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa369 -1.5 Fig 12.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa371 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0.0 0.2 0.4 0.6 QG (nC) 0.8 ID = -0.4 A; VDD = -10 V; Tamb = 25 °C Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Gate charge waveform definitions 017aaa372 -0.5 IS (A) -0.4 -0.3 -0.2 (1) (2) -0.1 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 18. Duty cycle definition 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 19. Package outline DFN1006B-3 (SOT883B) PMZB670UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 March 2012 © NXP B.V. 2012.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.4 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot883b_fr Fig 20. Reflow soldering footprint for DFN1006B-3 (SOT883B) PMZB670UPE Product data sheet All information provided in this document is subject to legal disclaimers.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMZB670UPE v.3 20120323 Product data sheet - PMZB670UPE v.2 Modifications: • 1.2 “Features and benefits” is corrected. PMZB670UPE v.2 20120207 Product data sheet - PMZB670UPE v.1 PMZB670UPE v.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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PMZB670UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . .