Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN008-75B,118, MOSFET

Table Of Contents

PSMN008-75P/75B

TrenchMOS™ standard level FET

Rev. 03 — 08 January 2004 Product data

1. Product proﬁle

1.1 Description

SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve

the lowest possible on-state resistance in each package.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

■ Fast switching ■ Low on-state resistance

■ Avalanche ruggedness rated ■ Low thermal resistance.

■ DC-to-DC converters ■ Uninterruptable power supplies

■ V

≤ 75 V ■ I

≤ 75 A

■ P

tot

≤ 230 W ■ R

DSon

≤ 8.5 mΩ

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB)

SOT404 (D

PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base;

connected to drain

(d)

MBK106

MBK116

MBB076

Summary of content (13 pages)

PAGE 1
PSMN008-75P/75B TrenchMOS™ standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features ■ Fast switching ■ Avalanche ruggedness rated ■ Low on-state resistance ■ Low thermal resistance. 1.3 Applications ■ DC-to-DC converters ■ Uninterruptable power supplies 1.
PAGE 2
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PSMN008-75P TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 PSMN008-75B D2-PAK Plastic single-ended surface mounted package; 3 leads (1 lead cropped) SOT404 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 03aa16 120 Pder (%) Ider (%) 80 80 40 40 0 03am86 120 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature.
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PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Rth(j-a) thermal resistance from junction to ambient Min Typ Max Unit - - 0.65 K/W SOT78 vertical in still air - 60 - K/W SOT404 mounted on a printed-circuit board; minimum footprint. - 50 - K/W 5.
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PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 75 90 - V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 4 100 nA Tj = 25 oC - 6.5 8.
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PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 03am80 100 Tj = 25 °C ID (A) 03am82 100 10 V 6 V VDS > ID x RDSon ID (A) 5.5 V 75 75 50 50 5V 4.7 V 25 25 175 °C 4.5 V Tj = 25 °C VGS = 4.1 V 0 0 0 0.5 1 1.5 VDS (V) Tj = 25 °C 2 4 6 VGS (V) Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03am81 25 Tj = 25 °C RDSon 0 2 Fig 6.
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PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 03aa35 10-1 0 60 120 Tj (°C) 180 min 0 2 typ max 4 VGS (V) 6 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage.
PAGE 8
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 03am83 100 VGS (V) VGS = 0 V IS (A) 03am85 10 ID = 75 A Tj = 25 °C 8 VDD = 60 V 75 6 50 4 175 °C Tj = 25 °C 25 2 0 0 0 0.5 1 VSD (V) 1.5 Tj = 25 °C and 175 °C; VGS = 0 V 0 100 QG (nC) 150 ID = 75 A; VDD = 60 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values.
PAGE 9
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.
PAGE 10
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 11
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 8. Revision history Table 6: Revision history Rev Date 03 20040108 CPCN Description HZG469 Product data (0307 750 12545) Modification: 02 20030711 • • • • • • • Updated to latest standards • Section 6 “Characteristics” Figure 5, 6, 7, 8, 11, 12, 13 modified. Section 1.4 “Quick reference data” and Section 6 “Characteristics” typical RDSon modified. Section 4 “Limiting values” EAS changed to EDS(AL)S.
PAGE 12
PSMN008-75P/75B Philips Semiconductors TrenchMOS™ standard level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification.
PAGE 13
Philips Semiconductors PSMN008-75P/75B TrenchMOS™ standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . .