Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN011-60MLX, MOSFET

PSMN011-60ML

N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

4 June 2013 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

2. Features and benefits

•

High efficiency due to low switching and conduction losses

•

Suitable for standard level gate drive sources

•

LFPAK33 package is footprint compatible with other 3.3mm types

•

Qualified to 175 °C

3. Applications

•

AC-to-DC converters

•

Synchronous rectification

•

DC-DC converters

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

= 25 °C - - 60 V

drain current T

= 25 °C; V

= 10 V; Fig. 1 - - 61 A

tot

total power dissipation T

= 25 °C; Fig. 2 - - 91 W

junction temperature -55 - 175 °C

Static characteristics

= 10 V; I

= 15 A; T

= 25 °C;

Fig. 12

- 9.35 11.3 mΩR

DSon

drain-source on-state

resistance

= 4.5 V; I

= 15 A; T

= 25 °C;

Fig. 12

- 11 13.1 mΩ

Dynamic characteristics

gate-drain charge V

= 4.5 V; I

= 15 A; V

= 30 V;

= 25 °C; Fig. 14; Fig. 15

- 5.1 - nC

Summary of content (13 pages)

PAGE 1
LF PA K 33 PSMN011-60ML N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2.
PAGE 2
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D G S mbb076 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3.
PAGE 3
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Conditions Tsld(M) peak soldering temperature Min Max Unit - 260 °C - 70 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 242 A VGS = 10 V; Tj(init) = 25 °C; ID = 61 A; - 48.5 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig.
PAGE 4
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 IAL (A) 003aak898 102 10 (1) (2) 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time ID (A) 003aak899 103 Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10 DC 1 10-1 Fig. 4. 1 1 ms 10 ms 100 ms 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9.
PAGE 5
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 003aak900 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 P 0.05 δ= tp T 0.02 single shot 10-2 10-6 Fig. 5. 10-5 tp 10-4 10-3 10-2 10-1 t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7.
PAGE 6
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit ID = 15 A; VDS = 30 V; VGS = 10 V; - 37.2 - nC ID = 15 A; VDS = 30 V; VGS = 4.5 V; - 16.6 - nC Tj = 25 °C; Fig. 14; Fig. 15 - 5 - nC - 5.1 - nC - 2.75 - V - 2191 - pF - 199 - pF - 111 - pF Dynamic characteristics QG(tot) total gate charge Tj = 25 °C; Fig. 14; Fig.
PAGE 7
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 003aak902 40 RDSon 003aak903 100 gfs (S) 80 30 60 20 40 10 0 Fig. 8. 20 0 4 8 12 VGS (V) 0 16 Drain-source on-state resistance as a function of gate-source voltage; typical values Fig. 9.
PAGE 8
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 003aak905 50 RDSon 2.6 V 2.8 V 3V 003aak906 3 a 2.5 40 2 30 1.5 20 1 4.5 V 10 0 0.5 VGS = 10 V 0 10 20 30 40 ID (A) 0 -60 50 Tj = 25 °C; tp = 300 μs Fig. 12. Drain-source on-state resistance as a function of drain current; typical values -30 0 30 60 90 120 150 Tj (°C) 180 Fig. 13.
PAGE 9
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 003aak908 104 C (pF) IS (A) 003aak909 60 48 Ciss 103 36 Coss 24 Crss 102 12 10 10-1 1 10 VDS (V) 0 102 175°C 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 Fig. 16. Input, output and reverse transfer capacitances Fig. 17.
PAGE 10
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 11. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E e1 L SOT1210 A A c1 b1 E1 mounting base D1 D H 1 4 e b w X A A1 c C θ Lp y C detail X 0 2.5 Dimensions Unit(1) 5 mm scale A A1 b b1 c c1 D(1) D1 E(1) E1 e e1 H L Lp w y max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45 3.40 0.25 0.50 nom 0.65 0.65 0.20 0.10 3.20 0.13 0.30 min 0.80 0.
PAGE 11
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.
PAGE 12
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PAGE 13
PSMN011-60ML NXP Semiconductors N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ...............