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PSMN011-60MS

N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33

4 June 2013 Product data sheet

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1. General description

Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This

product is designed and qualified for use in a wide range of industrial, communications

and domestic equipment.

2. Features and benefits

•

High efficiency due to low switching and conduction losses

•

Suitable for standard level gate drive sources

•

LFPAK33 package is footprint compatible with other 3.3mm types

•

Qualified to 175 °C

3. Applications

•

AC-to-DC converters

•

Synchronous rectification

•

DC-DC converters

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

= 25 °C - - 60 V

drain current T

= 25 °C; V

= 10 V; Fig. 1 - - 61 A

tot

total power dissipation T

= 25 °C; Fig. 2 - - 91 W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

= 10 V; I

= 15 A; T

= 25 °C;

Fig. 12

- 9.6 11.3 mΩ

Dynamic characteristics

gate-drain charge V

= 10 V; I

= 15 A; V

= 30 V;

= 25 °C; Fig. 14; Fig. 15

- 5.8 - nC

Summary of content (13 pages)

PAGE 1
LF PA K 33 PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D G S mbb076 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Tsld(M) peak soldering temperature Min Max Unit - 260 °C - 70 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 244 A VGS = 10 V; Tj(init) = 25 °C; ID = 61 A; - 48.1 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 60 V; RGS = 50 Ω; unclamped; Fig.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 IAL (A) 003aal111 102 10 (1) 1 10-1 10-3 Fig. 3. (2) 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time ID (A) 003aal112 103 Limit RDSon = VDS / ID 102 tp = 10 us 100 us 10 DC 1 10-1 Fig. 4. 1 1 ms 10 ms 100 ms 10 VDS (V) 102 Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 003aak900 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 P 0.05 δ= tp T 0.02 single shot 10-2 10-6 Fig. 5. 10-5 tp 10-4 10-3 10-2 10-1 t T tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 Symbol Parameter Conditions Min Typ Max Unit QGS gate-source charge ID = 15 A; VDS = 30 V; VGS = 10 V; - 6.1 - nC QGS(th) pre-threshold gatesource charge Tj = 25 °C; Fig. 14; Fig. 15 - 3.9 - nC QGS(th-pl) post-threshold gatesource charge - 2.2 - nC QGD gate-drain charge - 5.
PAGE 7
PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 ID (A) 003aal114 64 10 V 8V 6V ID (A) VGS = 5.5 V 48 003aal117 64 48 5V 32 32 4.5 V 16 16 175°C Tj = 25°C 4V 0 0 0.75 1.5 2.25 VDS (V) 0 3 Tj = 25 °C; tp = 300 μs Fig. 8. Fig. 9.
PAGE 8
PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 003aal118 50 RDSon 4.5 V a 5V 003aal119 2.5 40 2 5.5 V 30 20 1.5 1 6V 8V 10 0 0.5 VGS = 10 V 0 16 32 48 ID (A) 0 -60 64 Tj = 25 °C; tp = 300 μs Fig. 12. Drain-source on-state resistance as a function of drain current; typical values -30 0 30 60 90 120 150 Tj (°C) 180 Fig. 13.
PAGE 9
PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 003aal121 104 C (pF) IS (A) 48 Ciss 103 003aal122 64 32 Coss Crss 102 16 175°C 10 10-1 1 10 VDS (V) 0 102 0 0.2 0.4 Tj = 25°C 0.6 0.8 1 VSD (V) 1.2 Fig. 16. Input, output and reverse transfer capacitances Fig. 17.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 11. Package outline Plastic single ended surface mounted package (LFPAK33); 8 leads E e1 L SOT1210 A A c1 b1 E1 mounting base D1 D H 1 4 e b w X A A1 c C θ Lp y C detail X 0 2.5 Dimensions Unit(1) 5 mm scale A A1 b b1 c c1 D(1) D1 E(1) E1 e e1 H L Lp w y max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45 3.40 0.25 0.50 nom 0.65 0.65 0.20 0.10 3.20 0.13 0.30 min 0.80 0.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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PSMN011-60MS NXP Semiconductors N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............