Datasheet

1. Product profile
1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
Rev. 3 — 29 September 2011 Product data sheet
I2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
--68A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --170W
T
j
junction
temperature
-55 - 175 °C
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=15A;
T
j
= 100 °C; see Figure 11
--25mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 12; see Figure 11
[2]
-1113.9mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=25A;
V
DS
=50V; see Figure 14;
see Figure 13
-17-nC