Datasheet

PSMN013-100ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 29 September 2011 8 of 14
NXP Semiconductors
PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Gate charge waveform definitions Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad578
10
15
20
25
30
0 20406080
I
D
(A)
R
DSon
(m
Ω
)
6
10
V
GS
(V) = 4.5
20
5
003aad583
0
2
4
6
8
10
0 15304560
Q
G
(nC)
V
GS
(V)
V
DS
= 50V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aad581
10
10
2
10
3
10
4
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss