Datasheet

PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
10 August 2012 Product data sheet
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1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
•
High efficiency due to low switching and conduction losses
•
Improved dynamic avalanche performance
•
Suitable for standard level gate drive
1.3 Applications
•
DC-to-DC converters
•
Load switching
•
Motor control
•
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 [1] - - 68 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 170 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 12
- 19.4 25 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 13
[2] - 10.8 13.9 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 15; Fig. 14
- 17 - nC