Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN013-30YLC,115, MOSFET

Table Of Contents

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High reliability Power SO8 package,

qualified to 175°C

 Low parasitic inductance and

resistance

 Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology

 Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

1.3 Applications

 DC-to-DC converters

 Load switching

 Synchronous buck regulator

1.4 Quick reference data

PSMN013-30YLC

N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 3 — 24 October 2011 Product data sheet

LFPAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 175°C --30V

drain current T

=25°C; V

=10V; see Figure 1 --32A

tot

total power dissipation T

=25°C; see Figure 2 --26W

junction temperature -55 - 175 °C

Static characteristics

DSon

drain-source on-state

resistance

=4.5V; I

=10A; T

=25°C;

see Figure 12

- 14.4 16.9 mΩ

=10V; I

=10A; T

=25°C;

see Figure 12

- 11.6 13.6 mΩ

Dynamic characteristics

gate-drain charge V

=4.5V; I

=10A; V

=15V;

see Figure 14; see Figure 15

-1.2-nC

G(tot)

total gate charge V

=4.5V; I

=10A; V

=15V;

see Figure 14

; see Figure 15

-4-nC

Summary of content (15 pages)

PAGE 1
LF PA K PSMN013-30YLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol mb D G S mbb076 1 2 3 4 SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag245 40 03na19 120 ID (A) Pder (%) 30 80 20 40 10 0 0 0 Fig 1. 50 100 150 Tmb (°C) 0 200 50 100 150 200 Tmb (°C) Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aag246 102 IAL (A) 10 (1) (2) 1 10-1 10-3 Fig 3.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag247 103 ID (A) Limit RDSon= V DS / ID 102 tp =10 μ s 100 μ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN013-30YLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 24 October 2011 © NXP B.V. 2011.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 5 - 5.66 5.83 K/W 003aag248 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 0.05 0.02 δ= P 10-1 tp T single shot t tp T 10-2 10-6 Fig 5.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V 1.05 1.68 1.95 V 0.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Qoss output charge VGS = 0 V; VDS = 15 V; f = 1 MHz; Tj = 25 °C - 3.3 - nC Source-drain diode VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.86 1.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag251 50 gfs (S) 003aag252 40 ID (A) 40 30 30 20 20 Tj = 150 °C Tj = 25 °C 10 10 0 0 0 Fig 8. 10 20 30 ID (A) 40 Forward transconductance as a function of drain current; typical values 0 Fig 9.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag255 50 2.8 RDSon (mΩ) 003aag256 2 3.0 a 4.5V 40 1.5 VGS (V) = 3.5 30 VGS =10V 1 20 4.5 10 0.5 10 0 0 10 20 30 40 ID (A) 50 Fig 12. Drain-source on-state resistance as a function of drain current; typical values 0 -60 0 60 120 003aag257 VGS (V) ID 180 Fig 13.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 003aag258 103 IS (A) Ciss C (pF) 30 Coss 102 20 Crss 10 10-1 003aag259 40 1 10 VDS (V) Tj = 150 °C 10 Tj = 25 °C 0 102 0 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 0.3 0.6 0.9 VSD (V) 1.2 Fig 17.
PAGE 11
PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 7. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b 1/2 X c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.
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PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN013-30YLC v.3 20111024 Product data sheet - PSMN013-30YLC v.2 - PSMN013-30YLC v.1 Modifications: PSMN013-30YLC v.2 PSMN013-30YLC Product data sheet • • Status changed from preliminary to product. Various changes to content.
PAGE 13
PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
PAGE 15
PSMN013-30YLC NXP Semiconductors N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . .