Datasheet

PSMN013-80YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 June 2009 8 of 13
NXP Semiconductors
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad182
5
10
15
20
25
0204060
I
D
(A)
R
DSon
(mΩ)
6
10
5.5
8
V
GS
(V) = 5
20
003aaa50
8
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aad185
0
2
4
6
8
10
010203040
Q
G
(nC)
V
GS
(V)
V
DS
= 40V
16V
64V
003aad186
10
2
10
3
10
4
10
-1
1 10 10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss