Datasheet

PSMN015-60PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 22 February 2010 7 of 14
NXP Semiconductors
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
Source-drain diode
V
SD
source-drain voltage I
S
=15A; V
GS
=0V; T
j
=25°C - 0.8 1.2 V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-31-ns
Q
r
recovered charge - 28.5 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae033
0
10
20
30
40
50
0 1020304050
I
D
(A)
g
fs
(S)
003aae032
0
10
20
30
40
50
0246
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aae035
0
500
1000
1500
2000
0246810
V
GS
(V)
C
(pF)
C
iss
C
rss
003aae036
0
10
20
30
40
50
0 5 10 15 20
V
GS
(V)
R
DSon
(m
Ω
)