Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012 Product data sheet
D2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
j
=25°C; V
GS
=10V; see Figure 1 --57A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 148 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
= 100 °C; see
Figure 12
- - 28.8 mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 13
- 1316mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=30A; V
DS
=50V;
see Figure 14
; see Figure 15
-15-nC
Q
G(tot)
total gate charge - 49 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=60A;
V
sup
≤ 100 V; unclamped; R
GS
=50Ω
- - 101 mJ