Datasheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO-220
Rev. 3 — 27 September 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
j
=25°C; V
GS
=10V;
see Figure 1
--57A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --148W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=15A; T
j
=100°C;
see Figure 12
--28.8mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 13
- 1316mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=30A; V
DS
=50V;
see Figure 14
; see Figure 15
-15-nC
Q
G(tot)
total gate charge - 49 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=60A; V
sup
≤ 100 V;
unclamped; R
GS
=50Ω
--101mJ