Datasheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --30V
I
D
drain current T
mb
=25°C; V
GS
= 10 V; see Figure 1
[1]
--32A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --45W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=10A; T
j
=25°C;
see Figure 13
- 18.7 23.4 mΩ
V
GS
=10V; I
D
=10A; T
j
=25°C;
see Figure 13
- 13.4 17 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=4.5V; I
D
=10A; V
DS
=15V;
see Figure 14
; see Figure 15
-1.94-nC
Q
G(tot)
total gate charge V
GS
=4.5V; I
D
=10A; V
DS
=15V;
see Figure 14; see Figure 15
-5.1-nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=32A;
V
sup
≤ 30 V; R
GS
=50Ω; unclamped
--13mJ