Datasheet

L
F
P
A
K
5
6
PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
26 March 2014 Product data sheet
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1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
3. Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 2 - - 43 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 106 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 13
- - 37 R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 14
- 15 20.5
Dynamic characteristics
Q
GD
gate-drain charge - 11.8 16.5 nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 30 A; V
DS
= 50 V;
Fig. 15; Fig. 16
- 41 57.4 nC

Summary of content (14 pages)