Datasheet
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PSMN020-100YS
N-channel 100V 20.5mΩ standard level MOSFET in LFPAK
26 March 2014 Product data sheet
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1. General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
Advanced TrenchMOS provides low RDSon and low gate charge
•
High efficiency gains in switching power converters
•
Improved mechanical and thermal characteristics
•
LFPAK provides maximum power density in a Power SO8 package
3. Applications
•
DC-to-DC converters
•
Lithium-ion battery protection
•
Load switching
•
Motor control
•
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 2 - - 43 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 106 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 15 A; T
j
= 100 °C;
Fig. 13
- - 37 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
Fig. 14
- 15 20.5 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 11.8 16.5 nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 30 A; V
DS
= 50 V;
Fig. 15; Fig. 16
- 41 57.4 nC