Datasheet

PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33
using TrenchMOS Technology
4 September 2012 Product data sheet
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1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
•
Low parasitic inductance and resistance
•
Optimised for 4.5V Gate drive utilising Superjunction technology
•
Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
1.3 Applications
•
DC-to-DC converters
•
Load switching
•
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
= 25 °C - - 30 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 1 - - 31.8 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 33 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 10
- 20.5 27 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C; Fig. 10 - 14.7 18.1 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 4.5 V; I
D
= 5 A; V
DS
= 15 V;
Fig. 12; Fig. 13
- 1.7 - nC
Q
G(tot)
total gate charge V
GS
= 4.5 V; I
D
= 5 A; V
DS
= 15 V;
Fig. 12; Fig. 13
- 4.6 - nC