Datasheet

1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Low conduction losses due to low
on-state resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 DC-to-DC converters  Switched-mode power supplies
1.4 Quick reference data
PSMN025-100D
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 4 — 12 January 2012 Product data sheet
DPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 4
--47A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 150 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 11
; see Figure 12
- 2225mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=45A; V
DS
=80V;
T
j
=25°C; see Figure 13
-25-nC