Datasheet

PSMN034-100BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 2 March 2012 7 of 14
NXP Semiconductors
PSMN034-100BS
N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK.
Fig 7. Input and reverse capacitances as a function of
gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
003aae109
0
500
1000
1500
2000
04812
V
GS
(V)
C
(pF)
C
iss
C
rss
003aae111
20
40
60
80
100
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
003aae106
0
10
20
30
40
012345
V
DS
(V)
I
D
(A)
4.5
4
V
GS
(V) =
4.7
5.0
5.5
6.5
10.0
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min