Datasheet

PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Rev. 02 — 1 March 2010 Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
--32A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --86W
T
j
junction temperature -55 - 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=32A; V
sup
≤ 100 V;
unclamped; R
GS
=50Ω
--42mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=15A;
V
DS
= 50 V; see Figure 12
and 13
-6.9-nC
Q
G(tot)
total gate charge - 23.8 - nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=15A;
T
j
= 100 °C; see Figure 11
--62mΩ
V
GS
=10V; I
D
=15A;
T
j
= 25 °C; see Figure 16
- 29.3 34.5 mΩ