Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsPSMN035-150P,127, MOSFET

PSMN035-150B;

PSMN035-150P

N-channel enhancement mode ﬁeld-effect transistor

Rev. 04 — 22 February 2001 Product speciﬁcation

1. Description

SiliconMAX™

products use the latest TrenchMOS™

technology to achieve the

lowest possible on-state resistance for each package.

Product availability:

PSMN035-150P in SOT78 (TO-220AB)

PSMN035-150B in SOT404 (D

-PAK).

2. Features

■ Fast switching

■ Very low on-state resistance.

3. Applications

■ Switched mode power supplies.

4. Pinning information

[1] It is not possible to make connection to pin 2 of the SOT404 package.

1. SiliconMAX is a trademark of Royal Philips Electronics.

2. TrenchMOS is a trademark of Royal Philips Electronics.

Table 1: Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT78 (TO-220AB) SOT404 (D

PAK)

2 drain (d)

[1]

3 source (s)

mb mounting base;

connected to

drain (d)

MBK106

MBK116

MBB076

Summary of content (14 pages)

PAGE 1
PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Rev. 04 — 22 February 2001 Product specification 1. Description SiliconMAX™1 products use the latest TrenchMOS™2 technology to achieve the lowest possible on-state resistance for each package. Product availability: PSMN035-150P in SOT78 (TO-220AB) PSMN035-150B in SOT404 (D2-PAK). 2. Features ■ Fast switching ■ Very low on-state resistance. 3. Applications ■ Switched mode power supplies. 4.
PAGE 2
Philips Semiconductors PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 5.
PAGE 3
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa24 03aa16 120 Pder 120 Ider (%) (%) 100 100 80 80 60 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 200 0 Tmb (oC) 25 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature.
PAGE 4
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from junction to mounting Figure 5 base Rth(j-a) thermal resistance from junction to ambient Value Unit 0.6 K/W SOT78 package; vertical in still air 60 K/W SOT404 package; mounted on printed circuit board; minimum footprint. 50 K/W 7.
PAGE 5
Philips Semiconductors PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 150 − − V Tj = 25 °C 2.0 3.0 4.0 V Tj = 175 °C 1.0 − − V Tj = 25 °C − 0.
PAGE 6
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa019 50 VGS = 10 V ID (A) 003aaa020 50 8V 6V VDS > ID x RDSon ID (A) 40 40 30 o 175 C 30 5.4 V 20 20 5.2 V Tj = 25 oC 5V 10 4.8 V 10 4.6 V 4.4 V 0 0 0.4 0.8 1.2 0 1.6 2 VDS (V) 0 Tj = 25 °C 1 3 2 4 5 6 9 10 8 VGS (V) 7 Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values.
PAGE 7
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa023 VGS(th) (V) 003aaa024 10-2 4.5 ID 4 max (A) 10-3 3.5 min 3 10-4 typ 2.5 typ max 2 min 10-5 1.5 1 10-6 0.5 0 -60 -20 20 60 100 140 Tj (oC) 3 2 5 4 Tj = 25 °C Fig 10. Gate-source threshold voltage as a function of junction temperature. 003aaa025 50 (S) 1 VGS (V) ID = 1 mA; VDS = VGS gfs 10-7 180 Fig 11.
PAGE 8
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa027 50 003aaa028 10 ID = 50 A VGS IS 45 (A) 40 Tj = 25 oC (V) VDD = 30 V 8 35 Tj = 175 oC 30 VDD = 120 V 6 25 Tj = 25 oC 20 4 15 2 10 5 0 0 0 0.2 0.4 0.6 0.8 0 1.0 1.2 VSD (V) Tj = 25 °C and 175 °C; VGS = 0 V 40 60 80 QG (nC) ID = 50 A; VDD = 30 V and 120 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
PAGE 9
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.
PAGE 10
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.
PAGE 11
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date CPCN Description 04 20010222 - Product specification; fourth version; supersedes third version PSMN035-150_SERIES_HG_3 of 1 August 1999 03 19990801 - Product specification; third version; supersedes second version PSMN035-150_SERIES_2 of 1 August 1999 • • • 02 19990801 - 19990201 - Lotus Manuscript version; August 1999 Rev 1.
PAGE 12
PSMN035-150B; PSMN035-150P Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Datasheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
PAGE 13
Philips Semiconductors PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
PAGE 14
Philips Semiconductors PSMN035-150B; PSMN035-150P N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. .