Datasheet

L
F
P
A
K
5
6
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
1 May 2013 Product data sheet
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1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in
LFPAK56 package. This product has been designed and qualified for use in a wide range
of industrial, communications and domestic equipment.
2. Features and benefits
•
High efficiency due to low switching and conduction losses
•
Suitable for logic level gate drive
•
LFPAK56 package is footprint compatible with other Power-SO8 types
•
Qualified to 175 °C
3. Applications
•
DC-to-DC converters
•
Load switch
•
TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 1 - - 30 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 94.9 W
Static characteristics
V
GS
= 10 V; I
D
= 5 A; T
j
= 175 °C;
Fig. 13; Fig. 12
- - 103.5 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C; Fig. 12 - 30.2 37.5 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge V
GS
= 5 V; I
D
= 5 A; V
DS
= 80 V;
T
j
= 25 °C; Fig. 14; Fig. 15
- 21.6 - nC
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 5 A; V
DS
= 80 V;
T
j
= 25 °C; Fig. 14; Fig. 15
- 8.3 - nC