Datasheet

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A
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PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
15 August 2013 Product data sheet
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1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
•
Higher operating power due to low thermal resistance
•
Low conduction losses due to low on-state resistance
•
Suitable for high frequency applications due to fast switching characteristics
3. Applications
•
DC-to-DC converters
•
Switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 200 V
I
D
drain current - - 39 A
P
tot
total power dissipation
T
mb
= 25 °C
- - 250 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 17 A; T
j
= 25 °C - 41 57 mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
= 10 V; I
D
= 39 A; V
DS
= 160 V;
T
j
= 25 °C
- 37 50 nC