Datasheet

1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High reliability Power SO8 package,
qualified to 175°C
 Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
 Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
 Ultra low Rdson and low parasitic
inductance
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Power OR-ing
 Server power supplies
 Sync rectifier
1.4 Quick reference data
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 4 July 2011 Product data sheet
LFPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - - 25 V
I
D
drain current T
mb
= 25 °C; see Figure 1
[1]
--100A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --272W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
=25A;
T
j
= 25 °C; see Figure 12
- 0.95 1.25 mΩ
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 12
- 0.75 0.99 mΩ