Datasheet

1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Higher operating power due to low
thermal resistance
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 Class D amplifier
 DC-to-DC converters
 Motion control
 Switched-mode power supplies
1.4 Quick reference data
PSMN102-200Y
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 03 — 16 March 2011 Product data sheet
LFPAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 150 °C - - 200 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
; see Figure 3
--21.5A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --113W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=12A;
T
j
=25°C; see Figure 9;
see Figure 10
-86102mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=12A;
V
DS
= 100 V; see Figure 11;
see Figure 12
-10.1-nC