Datasheet

I
2
P
A
K
PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
2 April 2014 Product data sheet
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1. General description
Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
High efficiency due to low switching and conduction losses
•
Suitable for logic level gate drive sources
3. Applications
•
DC-to-DC converters
•
Load switiching
•
Motor control
•
Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 30 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 2 [1] - - 120 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
[2] - 1.1 1.3 mΩR
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 13
- 1.5 1.8 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 37 - nC
Q
G(tot)
total gate charge
V
GS
= 4.5 V; I
D
= 75 A; V
DS
= 15 V;
Fig. 14; Fig. 15
- 118 - nC