Datasheet

1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK (SOT226) package qualified to 175 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC convertors
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package
[2] Measured 3 mm from package.
PSMN1R5-40ES
N-channel 40 V 1.6 mΩ standard level MOSFET in I2PAK.
Rev. 01 — 19 April 2011 Product data sheet
I2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175°C --40V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
--120A
P
tot
total power dissipation T
mb
= 25 °C; see Figure 2 --338W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 13
[2]
-1.31.6mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=75A;
V
DS
=20V; see Figure 14;
see Figure 15
-32-nC
Q
G(tot)
total gate charge - 136 - nC